BUL45 - описание и поиск аналогов

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL45 DESCRIPTION With TO-220C package Fast switching speed High voltage APPLICATIONS Designed for use in electronic ballast and In switchmode power supplies PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL

Order this document MOTOROLA by BUL45D2/D SEMICONDUCTOR TECHNICAL DATA BUL45D2 Designer's Data Sheet POWER TRANSISTORS 5 AMPERES High Speed, High Gain Bipolar 700 VOLTS NPN Power Transistor with 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUL45D2 is state of art High Speed High gain BIPolar transistor (H2BIP). High dynamic

BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast (light ballast) and in http //onsemi.com Switchmode Power supplies up to 50 Watts. Features POWER TRANSISTOR 5.0 AMPERES, 700 VOLTS, Improved Efficiency Due to 35 AND 75 WATTS Low Base Drive Requirements (High and Flat DC Current Gain hFE) Low Power Losses (On-Stat

BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode www.onsemi.com and Built-in Efficient Antisaturation Network POWER TRANSISTOR The BUL45D2G is state-of-art High Speed High gain BiPolar 5.0 AMPERES, transistor (H2BIP). High dynamic characteristics and lot-to-lot 700 VOLTS, 75 WATTS minimum spread ( 150 ns on storage time) make it i

BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation http //onsemi.com Network POWER TRANSISTOR The BUL45D2G is state-of-art High Speed High gain BiPolar 5.0 AMPERES, transistor (H2BIP). High dynamic characteristics and lot-to-lot minimum spread ( 150 ns on storage time) make it ideally suitable fo