BUL45 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL45
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 5 A
Forward Current Transfer Ratio (hFE), MIN: 14
Noise Figure, dB: -
Package: TO220
BUL45 Transistor Equivalent Substitute - Cross-Reference Search
BUL45 Datasheet (PDF)
bul45.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL45 DESCRIPTION With TO-220C package Fast switching speed High voltage APPLICATIONS Designed for use in electronic ballast and In switchmode power supplies PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL
bul45rev.pdf
Order this documentMOTOROLAby BUL45/DSEMICONDUCTOR TECHNICAL DATABUL45 *Designer's Data SheetBUL45F*NPN Silicon Power Transistor*Motorola Preferred DeviceHigh Voltage SWITCHMODEt SeriesPOWER TRANSISTOR5.0 AMPERESDesigned for use in electronic ballast (light ballast) and in Switchmode Power700 VOLTSsupplies up to 50 Watts. Main features include:35 and 75 WATTS
bul45d2r.pdf
Order this documentMOTOROLAby BUL45D2/DSEMICONDUCTOR TECHNICAL DATABUL45D2Designer's Data SheetPOWER TRANSISTORS5 AMPERESHigh Speed, High Gain Bipolar700 VOLTSNPN Power Transistor with75 WATTSIntegrated Collector-EmitterDiode and Built-in EfficientAntisaturation NetworkThe BUL45D2 is stateofart High Speed High gain BIPolar transistor (H2BIP).High dynamic
bul45g.pdf
BUL45GNPN Silicon PowerTransistorHigh Voltage SWITCHMODEt SeriesDesigned for use in electronic ballast (light ballast) and inhttp://onsemi.comSwitchmode Power supplies up to 50 Watts.Features POWER TRANSISTOR5.0 AMPERES, 700 VOLTS, Improved Efficiency Due to:35 AND 75 WATTS Low Base Drive Requirements (High and Flat DC Current Gain hFE) Low Power Losses (On-Stat
bul45d2g.pdf
BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodewww.onsemi.comand Built-in Efficient AntisaturationNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lot700 VOLTS, 75 WATTSminimum spread (150 ns on storage time) make it i
bul45d2-d.pdf
BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodeand Built-in Efficient Antisaturationhttp://onsemi.comNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lotminimum spread (150 ns on storage time) make it ideally suitable fo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
