DTC123JE Todos los transistores

 ..1. Size:140K  rohm
 dtc123j-series dtc123je.pdf

100mA / 50V Digital transistors (with built-in resistors) DTC123JM / DTC123JE / DTC123JUA / DTC123JKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolati

 ..2. Size:1628K  cn shikues
 dtc123je.pdf

DTC123JE Digital Transistors (Built-in Resistors) DIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.They also have the advantage of almos

 0.1. Size:54K  motorola
 pdtc123jef 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

 0.2. Size:55K  motorola
 pdtc123je 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3

 0.3. Size:54K  philips
 pdtc123jef 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

 0.4. Size:55K  philips
 pdtc123je 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3

 0.5. Size:152K  rohm
 dtc123jeb.pdf

100mA / 50V Digital transistors (with built-in resistors) DTC123JEB Applications Dimensions (Unit mm) Inverter, Interface, Driver EMT3F 1.6 0.7 0.26 Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)

 0.6. Size:1527K  rohm
 dtc123jefra dtc123jkafra dtc123jmfha dtc123juafra.pdf

DTC123J series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC 50V IC(MAX.) 100mA R1 2.2k DTC123JM DTC123JEB R2 (SC-105AA) (SC-89) 47k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC123JE DTC123

 0.7. Size:76K  rohm
 dtc123je-jua-jka e42 sot416 323 346.pdf

DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor Digital transistors (built-in resistors) DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Features External dimensions (Units mm) 1) Built-in bias resistors enable the 1.6 0.2 DTC123JE configuration of an inverter circuit 1.0 0.1 without connecting external input 0.7 0.1 0.5 0.5 +0.1 +0.1 0.2-0.05 0.2-0.05 0.55 0.1 resist

 0.8. Size:237K  diodes
 ddtc123je.pdf

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22 TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60

 0.9. Size:144K  onsemi
 dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdf

DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r

 0.10. Size:399K  onsemi
 mun2235t1g mmun2235lt1g mun5235t1g dtc123jet1g dtc123jm3t5g nsbc123jf3t5g.pdf

MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) co

 0.11. Size:150K  chenmko
 chdtc123jegp.pdf

CHENMKO ENTERPRISE CO.,LTD CHDTC123JEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c