Справочник транзисторов. DTC123JE

 

Биполярный транзистор DTC123JE - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTC123JE
   Маркировка: 8M_E42
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.047
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SC75 SOT416

 Аналоги (замена) для DTC123JE

 

 

DTC123JE Datasheet (PDF)

 ..1. Size:140K  rohm
dtc123j-series dtc123je.pdf

DTC123JE
DTC123JE

100mA / 50V Digital transistors (with built-in resistors) DTC123JM / DTC123JE / DTC123JUA / DTC123JKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolati

 ..2. Size:1628K  cn shikues
dtc123je.pdf

DTC123JE
DTC123JE

DTC123JEDigital Transistors (Built-in Resistors) DIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.They also have the advantage of almos

 0.1. Size:54K  motorola
pdtc123jef 1.pdf

DTC123JE
DTC123JE

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 0.2. Size:55K  motorola
pdtc123je 3.pdf

DTC123JE
DTC123JE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

 0.3. Size:54K  philips
pdtc123jef 1.pdf

DTC123JE
DTC123JE

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 0.4. Size:55K  philips
pdtc123je 3.pdf

DTC123JE
DTC123JE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

 0.5. Size:152K  rohm
dtc123jeb.pdf

DTC123JE
DTC123JE

100mA / 50V Digital transistors (with built-in resistors) DTC123JEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.70.26 Features 1) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)

 0.6. Size:1527K  rohm
dtc123jefra dtc123jkafra dtc123jmfha dtc123juafra.pdf

DTC123JE
DTC123JE

DTC123J seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R12.2kDTC123JM DTC123JEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC123JE DTC123

 0.7. Size:76K  rohm
dtc123je-jua-jka e42 sot416 323 346.pdf

DTC123JE
DTC123JE

DTC123JE / DTC123JUA / DTC123JKA / DTC123JSATransistorDigital transistors (built-in resistors)DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Features External dimensions (Units : mm)1) Built-in bias resistors enable the1.60.2DTC123JEconfiguration of an inverter circuit1.00.1without connecting external input 0.70.10.5 0.5+0.1 +0.10.2-0.050.2-0.05 0.550.1resist

 0.8. Size:237K  diodes
ddtc123je.pdf

DTC123JE
DTC123JE

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

 0.9. Size:144K  onsemi
dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdf

DTC123JE
DTC123JE

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 0.10. Size:399K  onsemi
mun2235t1g mmun2235lt1g mun5235t1g dtc123jet1g dtc123jm3t5g nsbc123jf3t5g.pdf

DTC123JE
DTC123JE

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co

 0.11. Size:150K  chenmko
chdtc123jegp.pdf

DTC123JE
DTC123JE

CHENMKO ENTERPRISE CO.,LTDCHDTC123JEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

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