DTC123JE Datasheet, Equivalent, Cross Reference Search
Type Designator: DTC123JE
SMD Transistor Code: 8M_E42
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC75
SOT416
DTC123JE Transistor Equivalent Substitute - Cross-Reference Search
DTC123JE Datasheet (PDF)
dtc123j-series dtc123je.pdf
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100mA / 50V Digital transistors (with built-in resistors) DTC123JM / DTC123JE / DTC123JUA / DTC123JKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolati
dtc123je.pdf
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DTC123JEDigital Transistors (Built-in Resistors) DIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.They also have the advantage of almos
pdtc123jef 1.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red
pdtc123je 3.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33
pdtc123jef 1.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red
pdtc123je 3.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33
dtc123jeb.pdf
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100mA / 50V Digital transistors (with built-in resistors) DTC123JEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.70.26 Features 1) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)
dtc123jefra dtc123jkafra dtc123jmfha dtc123juafra.pdf
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DTC123J seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R12.2kDTC123JM DTC123JEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC123JE DTC123
dtc123je-jua-jka e42 sot416 323 346.pdf
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DTC123JE / DTC123JUA / DTC123JKA / DTC123JSATransistorDigital transistors (built-in resistors)DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Features External dimensions (Units : mm)1) Built-in bias resistors enable the1.60.2DTC123JEconfiguration of an inverter circuit1.00.1without connecting external input 0.70.10.5 0.5+0.1 +0.10.2-0.050.2-0.05 0.550.1resist
ddtc123je.pdf
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DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60
dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdf
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DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r
mun2235t1g mmun2235lt1g mun5235t1g dtc123jet1g dtc123jm3t5g nsbc123jf3t5g.pdf
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MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co
chdtc123jegp.pdf
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CHENMKO ENTERPRISE CO.,LTDCHDTC123JEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .