MBT3946DW1T1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MBT3946DW1T1
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 40 V
Corriente del colector DC máxima (Ic): 0.2 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 100
Encapsulados: SC-88 SC-70 SOT-363
Búsqueda de reemplazo de MBT3946DW1T1
- Selecciónⓘ de transistores por parámetros
MBT3946DW1T1 datasheet
smbt3946dw1t1g mbt3946dw1t1g.pdf
MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount
mbt3946dw1t1-d.pdf
MBT3946DW1T1G Dual General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 http //onsemi.com surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount (3) (2) (1) applications
mbt3946dw1t1g smbt3946dw1t1g.pdf
MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount
mmbt3946dw1t1.pdf
FM120-M WILLAS MMBT3946DW1T1 THRU Dual General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to TheM
Otros transistores... EMZ1, FH102A, HN1B01FDW1, IMH20TR1, MBT2222ADW1T1, MBT35200, MBT3904DW1, MBT3906DW1, A940, MBT6429DW1, MCH3007, MCH4009, MCH4014, MCH4015, MCH4016, MCH4017, MCH4020
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sd947 | a763 transistor | fhp40n20 | 2n3035 transistor | 2sb649a | 2sd188 | k b778 transistor | 2n5133 datasheet