MBT3946DW1T1. Аналоги и основные параметры
Наименование производителя: MBT3946DW1T1
Тип материала: Si
Полярность: NPN*PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SC-88 SC-70 SOT-363
Аналоги (замена) для MBT3946DW1T1
- подборⓘ биполярного транзистора по параметрам
MBT3946DW1T1 даташит
smbt3946dw1t1g mbt3946dw1t1g.pdf
MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount
mbt3946dw1t1-d.pdf
MBT3946DW1T1G Dual General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 http //onsemi.com surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount (3) (2) (1) applications
mbt3946dw1t1g smbt3946dw1t1g.pdf
MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount
mmbt3946dw1t1.pdf
FM120-M WILLAS MMBT3946DW1T1 THRU Dual General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to TheM
Другие транзисторы: EMZ1, FH102A, HN1B01FDW1, IMH20TR1, MBT2222ADW1T1, MBT35200, MBT3904DW1, MBT3906DW1, A940, MBT6429DW1, MCH3007, MCH4009, MCH4014, MCH4015, MCH4016, MCH4017, MCH4020
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