MBT3946DW1T1
Datasheet, Equivalent, Cross Reference Search
Type Designator: MBT3946DW1T1
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Collector Current |Ic max|: 0.2
A
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
SC-88
SC-70
SOT-363
MBT3946DW1T1
Transistor Equivalent Substitute - Cross-Reference Search
MBT3946DW1T1
Datasheet (PDF)
0.1. Size:174K onsemi
smbt3946dw1t1g mbt3946dw1t1g.pdf 
MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount
0.2. Size:241K onsemi
mbt3946dw1t1-d.pdf
MBT3946DW1T1GDual General PurposeTransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-363-6http://onsemi.comsurface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount(3) (2) (1)applications
0.3. Size:169K onsemi
mbt3946dw1t1g smbt3946dw1t1g.pdf
MBT3946DW1T1G,SMBT3946DW1T1GComplementary GeneralPurpose TransistorThe MBT3946DW1T1G device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-363-6surface mount package. By putting two discrete devices in onepackage, this device is ideal for low-power surface mount
0.4. Size:397K willas
mmbt3946dw1t1.pdf
FM120-M WILLAS MMBT3946DW1T1THRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toTheM
0.5. Size:664K lrc
lmbt3946dw1t1g lmbt3946dw1t3g.pdf
LMBT3946DW1T1GS-LMBT3946DW1T1GDual General Purpose Transistors PNP/NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VS
0.6. Size:664K lrc
lmbt3946dw1t1g.pdf
LMBT3946DW1T1GS-LMBT3946DW1T1GDual General Purpose Transistors PNP/NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low VCE(sat), 0.4 VS
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