MJ21195 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJ21195
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 250 W
   Tensión colector-emisor (Vce): 250 V
   Corriente del colector DC máxima (Ic): 16 A

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO204

Búsqueda de reemplazo de transistor bipolar MJ21195

MJ21195 Datasheet (PDF)

..1. Size:82K onsemi
mj21195 mj21196.pdf

MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @

0.1. Size:125K onsemi
mj21195g mj21196g.pdf

MJ21195G - PNPMJ21196G - NPNSilicon Power TransistorsThe MJ21195G and MJ21196G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current GainPOWER TRANSISTORS Excelle

0.2. Size:94K onsemi
mj21195-96.pdf

ON SemiconductortPNP*MJ21195Silicon Power TransistorsNPN*MJ21196The MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk head*ON Semiconductor Preferred Devicepositioners and linear applications.16 AMPERE Total Harmonic Distortion CharacterizedCOMPLEMENTARY High DC Current Gain SILICON

0.3. Size:83K onsemi
mj21195g.pdf