MJ21195 Todos los transistores

 

MJ21195 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ21195
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 250 W
   Tensión colector-emisor (Vce): 250 V
   Corriente del colector DC máxima (Ic): 16 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO204
 

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MJ21195 Datasheet (PDF)

 ..1. Size:82K  onsemi
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MJ21195

MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @

 0.1. Size:125K  onsemi
mj21195g mj21196g.pdf pdf_icon

MJ21195

MJ21195G - PNPMJ21196G - NPNSilicon Power TransistorsThe MJ21195G and MJ21196G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current GainPOWER TRANSISTORS Excelle

 0.2. Size:94K  onsemi
mj21195-96.pdf pdf_icon

MJ21195

ON SemiconductortPNP*MJ21195Silicon Power TransistorsNPN*MJ21196The MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk head*ON Semiconductor Preferred Devicepositioners and linear applications.16 AMPERE Total Harmonic Distortion CharacterizedCOMPLEMENTARY High DC Current Gain SILICON

 0.3. Size:83K  onsemi
mj21195g.pdf pdf_icon

MJ21195

MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @

Otros transistores... MCH5541 , MCH6001 , MCH6102 , MCH6202 , MCH6541 , MCH6542 , MCH6544 , MCH6545 , 2SC2655 , MJ21196 , MJB41C , MJB42C , MJB44H11 , MJB45H11 , MJB5742 , MJD128 , MJD253 .

 

 
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