MJ21195 Specs and Replacement

Type Designator: MJ21195

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Collector Current |Ic max|: 16 A

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO204

 MJ21195 Substitution

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MJ21195 datasheet

 ..1. Size:82K  onsemi

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MJ21195

MJ21195 - PNP MJ21196 - NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @... See More ⇒

 0.1. Size:125K  onsemi

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MJ21195

MJ21195G - PNP MJ21196G - NPN Silicon Power Transistors The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain POWER TRANSISTORS Excelle... See More ⇒

 0.2. Size:94K  onsemi

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MJ21195

ON Semiconductort PNP * MJ21195 Silicon Power Transistors NPN * MJ21196 The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head *ON Semiconductor Preferred Device positioners and linear applications. 16 AMPERE Total Harmonic Distortion Characterized COMPLEMENTARY High DC Current Gain SILICON ... See More ⇒

 0.3. Size:83K  onsemi

mj21195g.pdf pdf_icon

MJ21195

MJ21195 - PNP MJ21196 - NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @... See More ⇒

Detailed specifications: MCH5541, MCH6001, MCH6102, MCH6202, MCH6541, MCH6542, MCH6544, MCH6545, 2SC945, MJ21196, MJB41C, MJB42C, MJB44H11, MJB45H11, MJB5742, MJD128, MJD253

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