Справочник транзисторов. MJ21195

 

Биполярный транзистор MJ21195 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJ21195
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 250 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V
   Макcимальный постоянный ток коллектора (Ic): 16 A
   Граничная частота коэффициента передачи тока (ft): 5 MHz
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO204

 Аналоги (замена) для MJ21195

 

 

MJ21195 Datasheet (PDF)

 ..1. Size:82K  onsemi
mj21195 mj21196.pdf

MJ21195
MJ21195

MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @

 0.1. Size:125K  onsemi
mj21195g mj21196g.pdf

MJ21195
MJ21195

MJ21195G - PNPMJ21196G - NPNSilicon Power TransistorsThe MJ21195G and MJ21196G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current GainPOWER TRANSISTORS Excelle

 0.2. Size:94K  onsemi
mj21195-96.pdf

MJ21195
MJ21195

ON SemiconductortPNP*MJ21195Silicon Power TransistorsNPN*MJ21196The MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk head*ON Semiconductor Preferred Devicepositioners and linear applications.16 AMPERE Total Harmonic Distortion CharacterizedCOMPLEMENTARY High DC Current Gain SILICON

 0.3. Size:83K  onsemi
mj21195g.pdf

MJ21195
MJ21195

MJ21195 - PNPMJ21196 - NPNPreferred DevicesSilicon Power TransistorsThe MJ21195 and MJ21196 utilize Perforated Emitter technologyand are specifically designed for high power audio output, disk headpositioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERESCOMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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