MJ21195 - описание и поиск аналогов

 

MJ21195. Аналоги и основные параметры

Наименование производителя: MJ21195

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 250 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V

Макcимальный постоянный ток коллектора (Ic): 16 A

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 5 MHz

Статический коэффициент передачи тока (hFE): 25

Корпус транзистора: TO204

 Аналоги (замена) для MJ21195

- подборⓘ биполярного транзистора по параметрам

 

MJ21195 даташит

 ..1. Size:82K  onsemi
 mj21195 mj21196.pdf pdf_icon

MJ21195

MJ21195 - PNP MJ21196 - NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @

 0.1. Size:125K  onsemi
 mj21195g mj21196g.pdf pdf_icon

MJ21195

MJ21195G - PNP MJ21196G - NPN Silicon Power Transistors The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain POWER TRANSISTORS Excelle

 0.2. Size:94K  onsemi
 mj21195-96.pdf pdf_icon

MJ21195

ON Semiconductort PNP * MJ21195 Silicon Power Transistors NPN * MJ21196 The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head *ON Semiconductor Preferred Device positioners and linear applications. 16 AMPERE Total Harmonic Distortion Characterized COMPLEMENTARY High DC Current Gain SILICON

 0.3. Size:83K  onsemi
 mj21195g.pdf pdf_icon

MJ21195

MJ21195 - PNP MJ21196 - NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES COMPLEMENTARY SILICON- High DC Current Gain - hFE = 25 Min @

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MCH5541, MCH6001, MCH6102, MCH6202, MCH6541, MCH6542, MCH6544, MCH6545, 2SC945, MJ21196, MJB41C, MJB42C, MJB44H11, MJB45H11, MJB5742, MJD128, MJD253

 

 

 

 

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