MJD253 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJD253
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 12.5 W
   Tensión colector-emisor (Vce): 100 V
   Corriente del colector DC máxima (Ic): 4 A

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 40 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: DPAK IPAK

Búsqueda de reemplazo de transistor bipolar MJD253

MJD253 Datasheet (PDF)

..1. Size:107K onsemi
mjd243 mjd253.pdf

MJD243 (NPN),MJD253 (PNP)Complementary SiliconPlastic Power TransistorsDPAK-3 for Surface Mount Applicationswww.onsemi.comDesigned for low voltage, low-power, high-gain audio amplifierapplications.4.0 A, 100 V, 12.5 WFeaturesPOWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY(No Suffix)COLLECTOR COLL

..2. Size:243K inchange semiconductor
mjd253.pdf

isc Silicon PNP Power Transistor MJD253DESCRIPTIONHigh DC Current Gain-: h = 40(Min) @ I = -0.2 AFE CLow Collector Saturation Voltage-: V = -0.3V(Max.)@ I = -0.5 ACE(sat) CComplement to the NPN MJD243Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low voltage, low -power ,high-gain audioamplifier appli

0.1. Size:200K onsemi
mjd253t4g.pdf

MJD243,NJVMJD243T4G (NPN),MJD253,NJVMJD253T4G (PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorDPAK-3 for Surface Mount Applications4.0 A, 100 V, 12.5 WPOWER TRANSISTORDesigned for low voltage, low-power, high-gain audio amplifierapplications.Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC= 10 mAdc High DC Cu

0.2. Size:200K onsemi
mjd253-1g.pdf