MJD253. Аналоги и основные параметры

Наименование производителя: MJD253

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 12.5 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 40 MHz

Статический коэффициент передачи тока (hFE): 40

Корпус транзистора: DPAK IPAK

 Аналоги (замена) для MJD253

- подборⓘ биполярного транзистора по параметрам

 

MJD253 даташит

 ..1. Size:107K  onsemi
 mjd243 mjd253.pdf pdf_icon

MJD253

MJD243 (NPN), MJD253 (PNP) Complementary Silicon Plastic Power Transistors DPAK-3 for Surface Mount Applications www.onsemi.com Designed for low voltage, low-power, high-gain audio amplifier applications. 4.0 A, 100 V, 12.5 W Features POWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY (No Suffix) COLLECTOR COLL

 ..2. Size:243K  inchange semiconductor
 mjd253.pdf pdf_icon

MJD253

isc Silicon PNP Power Transistor MJD253 DESCRIPTION High DC Current Gain- h = 40(Min) @ I = -0.2 A FE C Low Collector Saturation Voltage- V = -0.3V(Max.)@ I = -0.5 A CE(sat) C Complement to the NPN MJD243 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage, low -power ,high-gain audio amplifier appli

 0.1. Size:200K  onsemi
 mjd253t4g.pdf pdf_icon

MJD253

MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu

 0.2. Size:200K  onsemi
 mjd253-1g.pdf pdf_icon

MJD253

MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJ21195, MJ21196, MJB41C, MJB42C, MJB44H11, MJB45H11, MJB5742, MJD128, 2N4401, MJD44E3, MJE15032, MJE15033, MJE15034, MJE15035, MJF31C, MJF32C, MJF44H11