MJD253 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

MJD253 Specs and Replacement

Type Designator: MJD253

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 4 A

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: DPAK IPAK

MJD253 Substitution

- BJT ⓘ Cross-Reference Search

MJD253 datasheet

..1. Size:107K onsemi

mjd243 mjd253.pdf pdf_icon

MJD243 (NPN), MJD253 (PNP) Complementary Silicon Plastic Power Transistors DPAK-3 for Surface Mount Applications www.onsemi.com Designed for low voltage, low-power, high-gain audio amplifier applications. 4.0 A, 100 V, 12.5 W Features POWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY (No Suffix) COLLECTOR COLL... See More ⇒

..2. Size:243K inchange semiconductor

mjd253.pdf pdf_icon

isc Silicon PNP Power Transistor MJD253 DESCRIPTION High DC Current Gain- h = 40(Min) @ I = -0.2 A FE C Low Collector Saturation Voltage- V = -0.3V(Max.)@ I = -0.5 A CE(sat) C Complement to the NPN MJD243 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage, low -power ,high-gain audio amplifier appli... See More ⇒

0.1. Size:200K onsemi

mjd253t4g.pdf pdf_icon

MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu... See More ⇒

0.2. Size:200K onsemi

mjd253-1g.pdf pdf_icon