MJD253 Datasheet, Equivalent, Cross Reference Search

   Type Designator: MJD253
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 4 A
   Transition Frequency (ft): 40 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: DPAK IPAK

MJD253 Transistor Equivalent Substitute - Cross-Reference Search

MJD253 Datasheet (PDF)

..1. Size:107K onsemi
mjd243 mjd253.pdf

MJD243 (NPN),MJD253 (PNP)Complementary SiliconPlastic Power TransistorsDPAK-3 for Surface Mount Applicationswww.onsemi.comDesigned for low voltage, low-power, high-gain audio amplifierapplications.4.0 A, 100 V, 12.5 WFeaturesPOWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY(No Suffix)COLLECTOR COLL

..2. Size:243K inchange semiconductor
mjd253.pdf

isc Silicon PNP Power Transistor MJD253DESCRIPTIONHigh DC Current Gain-: h = 40(Min) @ I = -0.2 AFE CLow Collector Saturation Voltage-: V = -0.3V(Max.)@ I = -0.5 ACE(sat) CComplement to the NPN MJD243Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low voltage, low -power ,high-gain audioamplifier appli

0.1. Size:200K onsemi
mjd253t4g.pdf

MJD243,NJVMJD243T4G (NPN),MJD253,NJVMJD253T4G (PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorDPAK-3 for Surface Mount Applications4.0 A, 100 V, 12.5 WPOWER TRANSISTORDesigned for low voltage, low-power, high-gain audio amplifierapplications.Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC= 10 mAdc High DC Cu

0.2. Size:200K onsemi
mjd253-1g.pdf