MJF31C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJF31C 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-emisor (Vce): 100 V
Corriente del colector DC máxima (Ic): 3 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO220FP
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MJF31C datasheet
mjf31c mjf32c.pdf
MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package http //onsemi.com Applications Designed for use in general purpose amplifier and switching 3.0 AMPERE applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
mjf31cg.pdf
MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package http //onsemi.com Applications Designed for use in general purpose amplifier and switching 3.0 AMPERE applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
Otros transistores... MJB5742, MJD128, MJD253, MJD44E3, MJE15032, MJE15033, MJE15034, MJE15035, TIP2955, MJF32C, MJF44H11, MJF45H11, MJL1302A, MJL21193, MJL21194, MJL21195, MJL21196
Parámetros del transistor bipolar y su interrelación.
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