MMBT6521L Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT6521L

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-emisor (Vce): 25 V

Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT23

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MMBT6521L datasheet

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MMBT6521L

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MMBT6521L

MMBT6521LT1G Amplifier Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc 2 Emitter-Base Voltage VEBO 4.0 Vdc EMITTER Collector Current Continuous IC 100 mAdc THERMAL

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MMBT6521L

MMBT6521LT1G, SMMBT6521LT1G Amplifier Transistor NPN Silicon Features www.onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT- 23 (TO -236) CASE 318 -08 STYLE 6 MAXIMUM RATINGS COLLECTOR Rating Symbol

MOSTRAR MÁS

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