MMBT6521L Datasheet and Replacement
Type Designator: MMBT6521L
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Collector Current |Ic max|: 0.1 A
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT23
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MMBT6521L Datasheet (PDF)
mmbt6521lt1g.pdf
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mmbt6521lt1.pdf
MMBT6521LT1GAmplifier TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 40 Vdc2Emitter-Base Voltage VEBO 4.0 VdcEMITTERCollector Current Continuous IC 100 mAdcTHERMAL
mmbt6521lt1g smmbt6521lt1g.pdf
MMBT6521LT1G,SMMBT6521LT1GAmplifier TransistorNPN SiliconFeatureswww.onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT- 23 (TO -236)CASE 318 -08STYLE 6MAXIMUM RATINGSCOLLECTORRating Symbol
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: KT8107D2 | E20158 | D44C4 | UN9217R | 2N1056 | 2SC999A | ECG2306
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History: KT8107D2 | E20158 | D44C4 | UN9217R | 2N1056 | 2SC999A | ECG2306
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