MMBT6521L. Аналоги и основные параметры

Наименование производителя: MMBT6521L

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.225 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Электрические характеристики

Статический коэффициент передачи тока (hFE): 300

Корпус транзистора: SOT23

 Аналоги (замена) для MMBT6521L

- подборⓘ биполярного транзистора по параметрам

 

MMBT6521L даташит

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MMBT6521L

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MMBT6521L

MMBT6521LT1G Amplifier Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc 2 Emitter-Base Voltage VEBO 4.0 Vdc EMITTER Collector Current Continuous IC 100 mAdc THERMAL

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MMBT6521L

MMBT6521LT1G, SMMBT6521LT1G Amplifier Transistor NPN Silicon Features www.onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT- 23 (TO -236) CASE 318 -08 STYLE 6 MAXIMUM RATINGS COLLECTOR Rating Symbol

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MMBT5551L, MMBT5551M3T5G, MMBT589L, MMBT6427L, MMBT6428L, MMBT6429L, MMBT6517L, MMBT6520L, 2SD718, MMBT8099L, MMBT918L, MMBTA05L, MMBTA06L, MMBTA06WT1, MMBTA13L, MMBTA14L, MMBTA42L