2N558 Todos los transistores

 

2N558 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N558
   Material: Ge
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 15 V
   Tensión emisor-base (Veb): 15 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO5
 

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2N558 Datasheet (PDF)

 0.1. Size:11K  semelab
 2n5583.pdf pdf_icon

2N558

2N5583Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

 0.2. Size:26K  semelab
 2n5583 1.pdf pdf_icon

2N558

2N5583Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

 0.3. Size:52K  microsemi
 2n5581 2n5582.pdf pdf_icon

2N558

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices Qualified Level JAN 2N5581 2N5582 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 50 Vdc VCEO Collector-Base Voltage 75 Vdc VCBO Emitter-Base Voltage 6.0 Vdc VEBO Collector Current 800 mAdc IC Total Power Dissipation @ T = 250C (1) 0.5 W A

Otros transistores... 2N556 , 2N5560 , 2N557 , 2N5575 , 2N5576 , 2N5577 , 2N5578 , 2N5579 , A1266 , 2N5580 , 2N5581 , 2N5582 , 2N5583 , 2N5583LP , 2N5584 , 2N5587 , 2N5588 .

History: ETP5095 | 2N1866 | 2SB1052 | MM1501A | 3NU72 | NKT781 | 2SA2186-AN

 

 
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