All Transistors. 2N558 Datasheet

 

2N558 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N558

Material of Transistor: Ge

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 85 °C

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO5

2N558 Transistor Equivalent Substitute - Cross-Reference Search

 

2N558 Datasheet (PDF)

1.1. 2n5583.pdf Size:11K _semelab

2N558

2N5583 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 c

1.2. 2n5583 1.pdf Size:26K _semelab

2N558

2N5583 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 c

 1.3. 2n5581 2n5582.pdf Size:52K _microsemi

2N558
2N558

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices Qualified Level JAN 2N5581 2N5582 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 50 Vdc VCEO Collector-Base Voltage 75 Vdc VCBO Emitter-Base Voltage 6.0 Vdc VEBO Collector Current 800 mAdc IC Total Power Dissipation @ T = 250C (1) 0.5 W A PT

Datasheet: 2N556 , 2N5560 , 2N557 , 2N5575 , 2N5576 , 2N5577 , 2N5578 , 2N5579 , 2N3866 , 2N5580 , 2N5581 , 2N5582 , 2N5583 , 2N5583LP , 2N5584 , 2N5587 , 2N5588 .

 

 
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