MSD1819AR
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSD1819AR
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 210
Paquete / Cubierta:
SC70
SOT323
Búsqueda de reemplazo de transistor bipolar MSD1819AR
MSD1819AR
Datasheet (PDF)
6.1. Size:153K motorola
msd1819a.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSD1819ART1/DNPN Silicon General PurposeMSD1819A-RT1Amplifier TransistorMSD1819A-ST1This NPN Silicon Epitaxial Planar Transistor is designed for general purposeMotorola Preferred Devicesamplifier applications. This device is housed in the SC-70/SOT-323 packagewhich is designed for low power surface mount applicat
6.2. Size:100K onsemi
msd1819a-r.pdf
MSD1819A-RT1G,SMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mounthttp://onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYL
6.3. Size:209K onsemi
msd1819a-rt1-d.pdf
MSD1819A--RT1General Purpose AmplifierTransistorNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalhttp://onsemi.compurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfaceCOLLECTORmount applications.3Features High hFE, 210 -- 460 Low VCE(sat),
6.4. Size:57K onsemi
msd1819a-rt1g nsvmsd1819a-rt1g.pdf
MSD1819A-RT1G,NSVMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mountwww.onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYLE
6.5. Size:100K onsemi
msd1819a-rt1g.pdf
MSD1819A-RT1G,SMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mounthttp://onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYL
6.6. Size:90K lrc
lmsd1819a-rt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose AmplifierTransistorLMSD1819A-RT1GS-LMSD1819A-RT1GNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in the3SC-70/SOT-323 package which is designed for low power surfacemount applications.1Features2 High hFE, 210-460 Low VCE
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
