All Transistors. MSD1819AR Datasheet

 

MSD1819AR Datasheet, Equivalent, Cross Reference Search


   Type Designator: MSD1819AR
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: SC70 SOT323

 MSD1819AR Transistor Equivalent Substitute - Cross-Reference Search

   

MSD1819AR Datasheet (PDF)

 6.1. Size:153K  motorola
msd1819a.pdf

MSD1819AR
MSD1819AR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSD1819ART1/DNPN Silicon General PurposeMSD1819A-RT1Amplifier TransistorMSD1819A-ST1This NPN Silicon Epitaxial Planar Transistor is designed for general purposeMotorola Preferred Devicesamplifier applications. This device is housed in the SC-70/SOT-323 packagewhich is designed for low power surface mount applicat

 6.2. Size:100K  onsemi
msd1819a-r.pdf

MSD1819AR
MSD1819AR

MSD1819A-RT1G,SMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mounthttp://onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYL

 6.3. Size:209K  onsemi
msd1819a-rt1-d.pdf

MSD1819AR
MSD1819AR

MSD1819A--RT1General Purpose AmplifierTransistorNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalhttp://onsemi.compurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfaceCOLLECTORmount applications.3Features High hFE, 210 -- 460 Low VCE(sat),

 6.4. Size:57K  onsemi
msd1819a-rt1g nsvmsd1819a-rt1g.pdf

MSD1819AR
MSD1819AR

MSD1819A-RT1G,NSVMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mountwww.onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYLE

 6.5. Size:100K  onsemi
msd1819a-rt1g.pdf

MSD1819AR
MSD1819AR

MSD1819A-RT1G,SMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mounthttp://onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYL

 6.6. Size:90K  lrc
lmsd1819a-rt1g.pdf

MSD1819AR
MSD1819AR

LESHAN RADIO COMPANY, LTD.General Purpose AmplifierTransistorLMSD1819A-RT1GS-LMSD1819A-RT1GNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in the3SC-70/SOT-323 package which is designed for low power surfacemount applications.1Features2 High hFE, 210-460 Low VCE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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