MSD1819AR. Аналоги и основные параметры

Наименование производителя: MSD1819AR

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Электрические характеристики

Статический коэффициент передачи тока (hFE): 210

Корпус транзистора: SC70 SOT323

 Аналоги (замена) для MSD1819AR

- подборⓘ биполярного транзистора по параметрам

 

MSD1819AR даташит

 6.1. Size:153K  motorola
msd1819a.pdfpdf_icon

MSD1819AR

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSD1819A RT1/D NPN Silicon General Purpose MSD1819A-RT1 Amplifier Transistor MSD1819A-ST1 This NPN Silicon Epitaxial Planar Transistor is designed for general purpose Motorola Preferred Devices amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applicat

 6.2. Size:100K  onsemi
msd1819a-r.pdfpdf_icon

MSD1819AR

MSD1819A-RT1G, SMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount http //onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features SC-70 (SOT-323) CASE 419 High hFE, 210-460 STYL

 6.3. Size:209K  onsemi
msd1819a-rt1-d.pdfpdf_icon

MSD1819AR

MSD1819A--RT1 General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general http //onsemi.com purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface COLLECTOR mount applications. 3 Features High hFE, 210 -- 460 Low VCE(sat),

 6.4. Size:57K  onsemi
msd1819a-rt1g nsvmsd1819a-rt1g.pdfpdf_icon

MSD1819AR

MSD1819A-RT1G, NSVMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount www.onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features SC-70 (SOT-323) CASE 419 High hFE, 210-460 STYLE

Другие транзисторы: MSB1218ART1, MSB709RT1, MSB92, MSB92A, MSB92AW, MSB92W, MSC2712GT1, MSD1328RT1, BC556, MSD42SW, MSD42W, MSD601R, MSD602RT1, MUN2111, MUN2112, MUN2113, MUN2114