NJD35N04 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NJD35N04
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 350 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 90 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: DPAK
- Selección de transistores por parámetros
NJD35N04 Datasheet (PDF)
njvnjd35n04.pdf
NJD35N04G,NJVNJD35N04G,NJVNJD35N04T4GNPN Darlington PowerTransistorhttp://onsemi.comThis high voltage power Darlington has been specifically designedfor inductive applications such as Electronic Ignition, SwitchingRegulators and Motor Control.DARLINGTONFeaturesPOWER TRANSISTORS Exceptional Safe Operating Area4 AMPERES High VCE; High Current Gain350 VOLTS
njd35n04t4g.pdf
NJD35N04G,NJVNJD35N04G,NJVNJD35N04T4GNPN Darlington PowerTransistorhttp://onsemi.comThis high voltage power Darlington has been specifically designedfor inductive applications such as Electronic Ignition, SwitchingRegulators and Motor Control.DARLINGTONFeaturesPOWER TRANSISTORS Exceptional Safe Operating Area4 AMPERES High VCE; High Current Gain350 VOLTS
njd35n04g.pdf
NJD35N04G,NJVNJD35N04G,NJVNJD35N04T4GNPN Darlington PowerTransistorhttp://onsemi.comThis high voltage power Darlington has been specifically designedfor inductive applications such as Electronic Ignition, SwitchingRegulators and Motor Control.DARLINGTONFeaturesPOWER TRANSISTORS Exceptional Safe Operating Area4 AMPERES High VCE; High Current Gain350 VOLTS
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BC337A-16 | 2SC2257A | TV37
History: BC337A-16 | 2SC2257A | TV37
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n3055 | irfp260n | 2n2222 datasheet | irf9540 | 2n3055 datasheet | 2sc945 | irfp250n | irf9540n