NJD35N04 Datasheet, Equivalent, Cross Reference Search
Type Designator: NJD35N04
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: DPAK
NJD35N04 Transistor Equivalent Substitute - Cross-Reference Search
NJD35N04 Datasheet (PDF)
njvnjd35n04.pdf
NJD35N04G,NJVNJD35N04G,NJVNJD35N04T4GNPN Darlington PowerTransistorhttp://onsemi.comThis high voltage power Darlington has been specifically designedfor inductive applications such as Electronic Ignition, SwitchingRegulators and Motor Control.DARLINGTONFeaturesPOWER TRANSISTORS Exceptional Safe Operating Area4 AMPERES High VCE; High Current Gain350 VOLTS
njd35n04t4g.pdf
NJD35N04G,NJVNJD35N04G,NJVNJD35N04T4GNPN Darlington PowerTransistorhttp://onsemi.comThis high voltage power Darlington has been specifically designedfor inductive applications such as Electronic Ignition, SwitchingRegulators and Motor Control.DARLINGTONFeaturesPOWER TRANSISTORS Exceptional Safe Operating Area4 AMPERES High VCE; High Current Gain350 VOLTS
njd35n04g.pdf
NJD35N04G,NJVNJD35N04G,NJVNJD35N04T4GNPN Darlington PowerTransistorhttp://onsemi.comThis high voltage power Darlington has been specifically designedfor inductive applications such as Electronic Ignition, SwitchingRegulators and Motor Control.DARLINGTONFeaturesPOWER TRANSISTORS Exceptional Safe Operating Area4 AMPERES High VCE; High Current Gain350 VOLTS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
