NS2029M3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NS2029M3

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.265 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT723

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NS2029M3 datasheet

 ..1. Size:116K  onsemi
 ns2029m3.pdf pdf_icon

NS2029M3

NS2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board www.onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typical)

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 ns2029m3t5g.pdf pdf_icon

NS2029M3

NS2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Reduces Board Space High hFE, 210 - 460 (Typical) PNP GENERAL Low VCE(sat),

Otros transistores... NJL4281D, NJL4302D, NJT4030P, NJT4031NT1G, NJW0302, NJW1302, NJW21194, NJX1675P, 2SC945, NSB1706DMW5, NSB4904DW1, NSB9435, NSL12AW, NSM6056MT1G, NSM80100M, NSM80101M, NSS12100M3T5G