NS2029M3 Datasheet. Specs and Replacement
Type Designator: NS2029M3 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.265 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT723
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NS2029M3 Substitution
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NS2029M3 datasheet
NS2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board www.onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typical) ... See More ⇒
NS2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Reduces Board Space High hFE, 210 - 460 (Typical) PNP GENERAL Low VCE(sat), ... See More ⇒
Detailed specifications: NJL4281D, NJL4302D, NJT4030P, NJT4031NT1G, NJW0302, NJW1302, NJW21194, NJX1675P, 2SC945, NSB1706DMW5, NSB4904DW1, NSB9435, NSL12AW, NSM6056MT1G, NSM80100M, NSM80101M, NSS12100M3T5G
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BJT Parameters and How They Relate
History: UN9116R | UNR1110 | DTC015EEB | 2N3771G | MHQ2484HX | FJP5200 | MMUN2113LT1G
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