NSS12601CF8 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS12601CF8  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.4 W

Tensión colector-emisor (Vce): 12 V

Corriente del colector DC máxima (Ic): 8 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Ganancia de corriente contínua (hFE): 200

Encapsulados: CHIPFET-8

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NSS12601CF8 datasheet

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NSS12601CF8

NSS12601CF8T1G 12 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 0.2. Size:659K  onsemi
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NSS12601CF8

NSS12601CF8T1G 12 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

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NSS12601CF8

NSS12600CF8T1G 12 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. http //onsem

MOSTRAR MÁS

Otros transistores... NSS12100M3T5G, NSS12100UW, NSS12100XV6T1G, NSS12200L, NSS12200WT1G, NSS12201L, NSS12500UW3, NSS12501UW3, 2SC2240, NSS1C200, NSS1C200L, NSS1C201LT1G, NSS1C201MZ4T1G, NSS20101JT1G, NSS20200L, NSS20201L, NSS20201MR6T1G