All Transistors. NSS12601CF8 Datasheet

 

NSS12601CF8 Datasheet and Replacement


   Type Designator: NSS12601CF8
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.4 W
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Collector Current |Ic max|: 8 A
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: CHIPFET-8
 

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NSS12601CF8 Datasheet (PDF)

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NSS12601CF8

NSS12601CF8T1G12 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

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NSS12601CF8

NSS12601CF8T1G12 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

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NSS12601CF8

NSS12600CF8T1G12 V, 6.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.http://onsem

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Datasheet: NSS12100M3T5G , NSS12100UW , NSS12100XV6T1G , NSS12200L , NSS12200WT1G , NSS12201L , NSS12500UW3 , NSS12501UW3 , D882P , NSS1C200 , NSS1C200L , NSS1C201LT1G , NSS1C201MZ4T1G , NSS20101JT1G , NSS20200L , NSS20201L , NSS20201MR6T1G .

History: D11C1057 | MPQ4146 | KRC825U

Keywords - NSS12601CF8 transistor datasheet

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