NSS20601CF8 Todos los transistores

 

NSS20601CF8 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS20601CF8
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.4 W
   Tensión colector-emisor (Vce): 20 V
   Corriente del colector DC máxima (Ic): 8 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: CHIPFET-8

 Búsqueda de reemplazo de transistor bipolar NSS20601CF8

 

NSS20601CF8 Datasheet (PDF)

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NSS20601CF8

NSS20601CF8T1G 20 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 0.2. Size:83K  onsemi
nss20601cf8t1g.pdf pdf_icon

NSS20601CF8

NSS20601CF8T1G 20 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 7.1. Size:106K  onsemi
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NSS20601CF8

NSS20600CF8T1G 20 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. http //onsem

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History: 2N652A

 

 
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