NSS20601CF8 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NSS20601CF8
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1.4 W
   Tensión colector-emisor (Vce): 20 V
   Corriente del colector DC máxima (Ic): 8 A

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 140 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: CHIPFET-8

Búsqueda de reemplazo de transistor bipolar NSS20601CF8

NSS20601CF8 Datasheet (PDF)

0.1. Size:82K onsemi
nss20601cf8-d.pdf

NSS20601CF8T1G20 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

0.2. Size:83K onsemi
nss20601cf8t1g.pdf

7.1. Size:106K onsemi
nss20600cf8.pdf

NSS20600CF8T1G20 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.http://onsem

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2N2175

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050