All Transistors. NSS20601CF8 Datasheet

 

NSS20601CF8 Datasheet and Replacement


   Type Designator: NSS20601CF8
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.4 W
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Collector Current |Ic max|: 8 A
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: CHIPFET-8
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NSS20601CF8 Datasheet (PDF)

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NSS20601CF8

NSS20601CF8T1G20 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 0.2. Size:83K  onsemi
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NSS20601CF8

NSS20601CF8T1G20 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

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NSS20601CF8

NSS20600CF8T1G20 V, 7.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.http://onsem

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Keywords - NSS20601CF8 transistor datasheet

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