NSS30070MR6T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS30070MR6T1G 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.665 W
Tensión colector-emisor (Vce): 30 V
Corriente del colector DC máxima (Ic): 0.7 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 150
Encapsulados: SC-74 SC59-ML
📄📄 Copiar
Búsqueda de reemplazo de NSS30070MR6T1G
- Selecciónⓘ de transistores por parámetros
NSS30070MR6T1G datasheet
nss30070mr6t1g.pdf
NSS30070MR6T1G 30 V, 0.7 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor
nss30071mr6t1g.pdf
NSS30071MR6T1G 30 V, 0.7 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor
nss30201mr6t1g.pdf
NSS30201MR6T1G 30 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
nss30201mr6t1g snss30201mr6t1g.pdf
NSS30201MR6T1G, SNSS30201MR6T1G 30 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 30 VOLTS where affordable efficien
Otros transistores... NSS20101JT1G, NSS20200L, NSS20201L, NSS20201MR6T1G, NSS20300MR6T1G, NSS20500UW3, NSS20501UW3, NSS20601CF8, TIP32C, NSS30071MR6T1G, NSS30100LT1G, NSS30101LT1G, NSS30201MR6T1G, NSS35200CF8T1G, NSS35200MR6T1G, NSS40200L, NSS40200UW6T1G
Parámetros del transistor bipolar y su interrelación.
History: RN2111MFV | 2SC1810 | BC372-16 | SUR545J | BC328-01 | BDX29-6 | CD9012
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
Popular searches
2n3565 | irf530n | pn2222a datasheet | tip41c transistor | 2n5087 | ksa1381 | bc546 | 2sc458





