NSS30070MR6T1G datasheet, аналоги, основные параметры
Наименование производителя: NSS30070MR6T1G 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.665 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимальный постоянный ток коллектора (Ic): 0.7 A
Электрические характеристики
Статический коэффициент передачи тока (hFE): 150
Корпус транзистора: SC-74 SC59-ML
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Аналоги (замена) для NSS30070MR6T1G
- подборⓘ биполярного транзистора по параметрам
NSS30070MR6T1G даташит
nss30070mr6t1g.pdf
NSS30070MR6T1G 30 V, 0.7 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor
nss30071mr6t1g.pdf
NSS30071MR6T1G 30 V, 0.7 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is impor
nss30201mr6t1g.pdf
NSS30201MR6T1G 30 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
nss30201mr6t1g snss30201mr6t1g.pdf
NSS30201MR6T1G, SNSS30201MR6T1G 30 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 30 VOLTS where affordable efficien
Другие транзисторы: NSS20101JT1G, NSS20200L, NSS20201L, NSS20201MR6T1G, NSS20300MR6T1G, NSS20500UW3, NSS20501UW3, NSS20601CF8, TIP32C, NSS30071MR6T1G, NSS30100LT1G, NSS30101LT1G, NSS30201MR6T1G, NSS35200CF8T1G, NSS35200MR6T1G, NSS40200L, NSS40200UW6T1G
Параметры биполярного транзистора и их взаимосвязь
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