NSS40200UW6T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS40200UW6T1G 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-emisor (Vce): 40 V
Corriente del colector DC máxima (Ic): 4 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 140 MHz
Ganancia de corriente contínua (hFE): 150
Encapsulados: WDFN-6
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NSS40200UW6T1G datasheet
nss40200l nsv40200l.pdf
NSS40200L, NSV40200L 40 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is im
nss40200l.pdf
NSS40200LT1G 40 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
nss40200lt1g.pdf
NSS40200LT1G, NSV40200LT1G 40 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -40 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable
Otros transistores... NSS30070MR6T1G, NSS30071MR6T1G, NSS30100LT1G, NSS30101LT1G, NSS30201MR6T1G, NSS35200CF8T1G, NSS35200MR6T1G, NSS40200L, BD333, NSS40201L, NSS40300, NSS40300DD, NSS40300MD, NSS40301, NSS40301MD, NSS40302PD, NSS40500UW3
Parámetros del transistor bipolar y su interrelación.
History: BC338CP | GT758
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