Биполярный транзистор NSS40200UW6T1G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: NSS40200UW6T1G
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1.5
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимальный постоянный ток коллектора (Ic): 4
A
Граничная частота коэффициента передачи тока (ft): 140
MHz
Статический коэффициент передачи тока (hfe): 150
Корпус транзистора: WDFN-6
NSS40200UW6T1G
Datasheet (PDF)
6.1. Size:86K onsemi
nss40200l nsv40200l.pdf NSS40200L, NSV40200L40 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is im
6.2. Size:126K onsemi
nss40200l.pdf NSS40200LT1G40 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
6.3. Size:127K onsemi
nss40200lt1g.pdf NSS40200LT1G,NSV40200LT1G40 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These-40 VOLTSare designed for use in low voltage, high speed switching applications4.0 AMPSwhere affordable
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