NSS40200UW6T1G Datasheet. Specs and Replacement
Type Designator: NSS40200UW6T1G 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 4 A
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 150
Package: WDFN-6
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NSS40200UW6T1G datasheet
NSS40200L, NSV40200L 40 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is im... See More ⇒
NSS40200LT1G 40 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa... See More ⇒
NSS40200LT1G, NSV40200LT1G 40 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -40 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable... See More ⇒
Detailed specifications: NSS30070MR6T1G, NSS30071MR6T1G, NSS30100LT1G, NSS30101LT1G, NSS30201MR6T1G, NSS35200CF8T1G, NSS35200MR6T1G, NSS40200L, BD333, NSS40201L, NSS40300, NSS40300DD, NSS40300MD, NSS40301, NSS40301MD, NSS40302PD, NSS40500UW3
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