NSS40300MD Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS40300MD

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.576 W

Tensión colector-emisor (Vce): 40 V

Corriente del colector DC máxima (Ic): 6 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 220

Encapsulados: SOIC-8

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NSS40300MD datasheet

 ..1. Size:106K  onsemi
nss40300md.pdf pdf_icon

NSS40300MD

NSS40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low saturation voltage VCE(sat), high current gain and Base/Emitter turn on http //onsemi.com voltage. 40 VOLTS Typical appl

 0.1. Size:132K  onsemi
nss40300mdr2g.pdf pdf_icon

NSS40300MD

NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge http //onsemi.com family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low 40 VOLTS saturation voltage VCE(sat), high current gain and Base/Emitter turn on 6.0 A

 0.2. Size:219K  onsemi
nss40300mdr2g nsv40300mdr2g.pdf pdf_icon

NSS40300MD

NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge http //onsemi.com family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low 40 VOLTS saturation voltage VCE(sat), high current gain and Base/Emitter turn on 6.0 A

 5.1. Size:159K  onsemi
nss40300mz4.pdf pdf_icon

NSS40300MD

NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation http //onsemi.com voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where PNP TRANSISTOR affordable effic

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