All Transistors. NSS40300MD Datasheet

 

NSS40300MD Datasheet, Equivalent, Cross Reference Search


   Type Designator: NSS40300MD
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.576 W
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Collector Current |Ic max|: 6 A
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 220
   Noise Figure, dB: -
   Package: SOIC-8

 NSS40300MD Transistor Equivalent Substitute - Cross-Reference Search

   

NSS40300MD Datasheet (PDF)

 ..1. Size:106K  onsemi
nss40300md.pdf

NSS40300MD
NSS40300MD

NSS40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn on http://onsemi.comvoltage.40 VOLTSTypical appl

 0.1. Size:132K  onsemi
nss40300mdr2g.pdf

NSS40300MD
NSS40300MD

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A

 0.2. Size:219K  onsemi
nss40300mdr2g nsv40300mdr2g.pdf

NSS40300MD
NSS40300MD

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A

 5.1. Size:159K  onsemi
nss40300mz4.pdf

NSS40300MD
NSS40300MD

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic

 5.2. Size:89K  onsemi
nss40300mz4t1g.pdf

NSS40300MD
NSS40300MD

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic

 5.3. Size:89K  onsemi
nss40300mz4t3g.pdf

NSS40300MD
NSS40300MD

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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