Биполярный транзистор NSS40300MD
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: NSS40300MD
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.576
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимальный постоянный ток коллектора (Ic): 6
A
Граничная частота коэффициента передачи тока (ft): 100
MHz
Статический коэффициент передачи тока (hfe): 220
Корпус транзистора:
SOIC-8
Аналоги (замена) для NSS40300MD
NSS40300MD
Datasheet (PDF)
..1. Size:106K onsemi
nss40300md.pdf 
NSS40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn on http://onsemi.comvoltage.40 VOLTSTypical appl
0.1. Size:132K onsemi
nss40300mdr2g.pdf 
NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A
0.2. Size:219K onsemi
nss40300mdr2g nsv40300mdr2g.pdf 
NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A
5.1. Size:159K onsemi
nss40300mz4.pdf 
NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
5.2. Size:89K onsemi
nss40300mz4t1g.pdf 
NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
5.3. Size:89K onsemi
nss40300mz4t3g.pdf 
NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
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