NSS60200LT1G Todos los transistores

 

NSS60200LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS60200LT1G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.54 W
   Tensión colector-emisor (Vce): 60 V
   Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar NSS60200LT1G

 

NSS60200LT1G Datasheet (PDF)

 5.1. Size:148K  onsemi
nss60200l.pdf

NSS60200LT1G NSS60200LT1G

NSS60200L60 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.-

 5.2. Size:127K  onsemi
nss60200l-d.pdf

NSS60200LT1G NSS60200LT1G

NSS60200LT1G60 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 6.1. Size:249K  onsemi
nss60200dmt.pdf

NSS60200LT1G NSS60200LT1G

DATA SHEETwww.onsemi.comLow VCE(sat) PNP Transistors 60 Volt, 2 AmpPNP Low VCE(sat) Transistors60 V, 2 AMARKINGNSS60200DMTDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1miniature surface mount devices featuring ultra low saturation voltageWDFN6AD M(VCE(sat)) and high current gain capability. These are designed for use CASE 506ANin low voltage, h

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