NSS60200LT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS60200LT1G  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.54 W

Tensión colector-emisor (Vce): 60 V

Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 150

Encapsulados: SOT23

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NSS60200LT1G datasheet

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NSS60200LT1G

NSS60200L 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. -

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NSS60200LT1G

NSS60200LT1G 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 6.1. Size:249K  onsemi
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NSS60200LT1G

DATA SHEET www.onsemi.com Low VCE(sat) PNP Transistors 60 Volt, 2 Amp PNP Low VCE(sat) Transistors 60 V, 2 A MARKING NSS60200DMT DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 miniature surface mount devices featuring ultra low saturation voltage WDFN6 AD M (VCE(sat)) and high current gain capability. These are designed for use CASE 506AN in low voltage, h

MOSTRAR MÁS

Otros transistores... NSS40300MD, NSS40301, NSS40301MD, NSS40302PD, NSS40500UW3, NSS40501UW3, NSS40600CF8, NSS40601CF8, 2N5401, NSS60201LT1G, NSS60600, NSS60601MZ4, NST30010MXV6, NST3904DP6, NST3904DXV6, NST3904F3T5G, NST3906DP6