NSS60200LT1G Todos los transistores

 

NSS60200LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS60200LT1G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.54 W
   Tensión colector-emisor (Vce): 60 V
   Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SOT23

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NSS60200LT1G Datasheet (PDF)

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NSS60200LT1G

NSS60200L 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. -

 5.2. Size:127K  onsemi
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NSS60200LT1G

NSS60200LT1G 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 6.1. Size:249K  onsemi
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NSS60200LT1G

DATA SHEET www.onsemi.com Low VCE(sat) PNP Transistors 60 Volt, 2 Amp PNP Low VCE(sat) Transistors 60 V, 2 A MARKING NSS60200DMT DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 miniature surface mount devices featuring ultra low saturation voltage WDFN6 AD M (VCE(sat)) and high current gain capability. These are designed for use CASE 506AN in low voltage, h

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