All Transistors. NSS60200LT1G Datasheet

 

NSS60200LT1G Datasheet and Replacement


   Type Designator: NSS60200LT1G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.54 W
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 2 A
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT23
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NSS60200LT1G Datasheet (PDF)

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NSS60200LT1G

NSS60200L60 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.-

 5.2. Size:127K  onsemi
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NSS60200LT1G

NSS60200LT1G60 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 6.1. Size:249K  onsemi
 nss60200dmt.pdf pdf_icon

NSS60200LT1G

DATA SHEETwww.onsemi.comLow VCE(sat) PNP Transistors 60 Volt, 2 AmpPNP Low VCE(sat) Transistors60 V, 2 AMARKINGNSS60200DMTDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1miniature surface mount devices featuring ultra low saturation voltageWDFN6AD M(VCE(sat)) and high current gain capability. These are designed for use CASE 506ANin low voltage, h

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