NSS60200LT1G Datasheet. Specs and Replacement

Type Designator: NSS60200LT1G  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.54 W

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 2 A

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: SOT23

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NSS60200LT1G datasheet

 5.1. Size:148K  onsemi

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NSS60200LT1G

NSS60200L 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. -... See More ⇒

 5.2. Size:127K  onsemi

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NSS60200LT1G

NSS60200LT1G 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa... See More ⇒

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NSS60200LT1G

DATA SHEET www.onsemi.com Low VCE(sat) PNP Transistors 60 Volt, 2 Amp PNP Low VCE(sat) Transistors 60 V, 2 A MARKING NSS60200DMT DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 miniature surface mount devices featuring ultra low saturation voltage WDFN6 AD M (VCE(sat)) and high current gain capability. These are designed for use CASE 506AN in low voltage, h... See More ⇒

Detailed specifications: NSS40300MD, NSS40301, NSS40301MD, NSS40302PD, NSS40500UW3, NSS40501UW3, NSS40600CF8, NSS40601CF8, 2N5401, NSS60201LT1G, NSS60600, NSS60601MZ4, NST30010MXV6, NST3904DP6, NST3904DXV6, NST3904F3T5G, NST3906DP6

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