BC847BPN Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC847BPN

Código: 13*_13t

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT363

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BC847BPN datasheet

 ..1. Size:53K  philips
 bc847bpn 2.pdf pdf_icon

BC847BPN

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC847BPN NPN/PNP general purpose transistor 1999 Apr 26 Preliminary specification Supersedes data of 1997 Jul 09 Philips Semiconductors Preliminary specification NPN/PNP general purpose transistor BC847BPN FEATURES PINNING Low collector capacitance PIN DESCRIPTION Low collector-emitter saturation voltage 1, 4 e

 ..2. Size:101K  philips
 bc847bpn.pdf pdf_icon

BC847BPN

BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces

 ..3. Size:101K  nxp
 bc847bpn.pdf pdf_icon

BC847BPN

BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces

 ..4. Size:1957K  kexin
 bc847bpn.pdf pdf_icon

BC847BPN

SMD Type Transistors Composite Transistors BC847BPN (KC847BPN) Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors C1 B2 E2 0.5 mm (min) PNP NPN E1 B1 C2 1.9 mm Absolute Maximum Ratings Ta = 25 Parame

MOSTRAR MÁS

Otros transistores... BC807W, BC817DPN, BC817W, BC846AT, BC846BT, BC846S, BC846T, BC846W, BC639, BC847BV, BC847BVN, BC847T, BC847W, BC848W, BC856AT, BC856BT, BC856S