All Transistors. BC847BPN Datasheet

 

BC847BPN Datasheet and Replacement


   Type Designator: BC847BPN
   SMD Transistor Code: 13*_13t
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT363
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BC847BPN Datasheet (PDF)

 ..1. Size:53K  philips
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BC847BPN

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageMBD128BC847BPNNPN/PNP general purposetransistor1999 Apr 26Preliminary specificationSupersedes data of 1997 Jul 09Philips Semiconductors Preliminary specificationNPN/PNP general purpose transistor BC847BPNFEATURES PINNING Low collector capacitancePIN DESCRIPTION Low collector-emitter saturation voltage1, 4 e

 ..2. Size:101K  philips
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BC847BPN

BC847BPN45 V, 100 mA NPN/PNP general-purpose transistorRev. 04 18 February 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces

 ..3. Size:101K  nxp
bc847bpn.pdf pdf_icon

BC847BPN

BC847BPN45 V, 100 mA NPN/PNP general-purpose transistorRev. 04 18 February 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces

 ..4. Size:1957K  kexin
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BC847BPN

SMD Type TransistorsComposite TransistorsBC847BPN (KC847BPN) Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistorsC1 B2 E20.5 mm (min)PNPNPNE1 B1 C21.9 mm Absolute Maximum Ratings Ta = 25Parame

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

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