BFG10W Todos los transistores

 

BFG10W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFG10W
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-emisor (Vce): 10 V
   Corriente del colector DC máxima (Ic): 0.25 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2000 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: SO4
 

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BFG10W Datasheet (PDF)

 0.1. Size:240K  philips
 bfg10wx.pdf pdf_icon

BFG10W

DISCRETE SEMICONDUCTORS DATA SHEETBFG10W/XUHF power transistorProduct specification 1995 Sep 22NXP Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage4 3dual-emitter SOT343N package. 900 MHz an

 0.2. Size:48K  philips
 bfg10wx 1.pdf pdf_icon

BFG10W

DISCRETE SEMICONDUCTORSDATA SHEETBFG10W/XUHF power transistor1995 Sep 22Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistorencapsulated in a plastic, 4-pinfpage Small size discrete power amplifier 4 3dua

 0.3. Size:240K  nxp
 bfg10wx.pdf pdf_icon

BFG10W

DISCRETE SEMICONDUCTORS DATA SHEETBFG10W/XUHF power transistorProduct specification 1995 Sep 22NXP Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage4 3dual-emitter SOT343N package. 900 MHz an

MOSTRAR MÁS

Otros transistores... BC869-25 , BCP68-25 , BCP69-16 , BCP69-25 , BCW61B , BCW61C , BF820W , BF824W , BD139 , BFG25A , BFG25AW , BFG310 , BFG310W , BFG325 , BFG325W , BFG410W , BFG424F .

 

 
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