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BFG10W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFG10W
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-emisor (Vce): 10 V
   Corriente del colector DC máxima (Ic): 0.25 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2000 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: SO4
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BFG10W Datasheet (PDF)

 0.1. Size:240K  philips
bfg10wx.pdf pdf_icon

BFG10W

DISCRETE SEMICONDUCTORS DATA SHEETBFG10W/XUHF power transistorProduct specification 1995 Sep 22NXP Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage4 3dual-emitter SOT343N package. 900 MHz an

 0.2. Size:48K  philips
bfg10wx 1.pdf pdf_icon

BFG10W

DISCRETE SEMICONDUCTORSDATA SHEETBFG10W/XUHF power transistor1995 Sep 22Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistorencapsulated in a plastic, 4-pinfpage Small size discrete power amplifier 4 3dua

 0.3. Size:240K  nxp
bfg10wx.pdf pdf_icon

BFG10W

DISCRETE SEMICONDUCTORS DATA SHEETBFG10W/XUHF power transistorProduct specification 1995 Sep 22NXP Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage4 3dual-emitter SOT343N package. 900 MHz an

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BU2720AX | 2SC1757E | CPH5520 | 2SC1727 | D42T4 | D43C8 | MP4051

 

 
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