BFG10W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFG10W  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-emisor (Vce): 10 V

Corriente del colector DC máxima (Ic): 0.25 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2000 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: SO4

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BFG10W datasheet

 0.1. Size:240K  philips
 bfg10wx.pdf pdf_icon

BFG10W

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage 4 3 dual-emitter SOT343N package. 900 MHz an

 0.2. Size:48K  philips
 bfg10wx 1.pdf pdf_icon

BFG10W

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor 1995 Sep 22 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin fpage Small size discrete power amplifier 4 3 dua

 0.3. Size:240K  nxp
 bfg10wx.pdf pdf_icon

BFG10W

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage 4 3 dual-emitter SOT343N package. 900 MHz an

MOSTRAR MÁS

Otros transistores... BC869-25, BCP68-25, BCP69-16, BCP69-25, BCW61B, BCW61C, BF820W, BF824W, 2SC5200, BFG25A, BFG25AW, BFG310, BFG310W, BFG325, BFG325W, BFG410W, BFG424F