BFG10W Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG10W
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Collector Current |Ic max|: 0.25 A
Transition Frequency (ft): 2000 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SO4
BFG10W Transistor Equivalent Substitute - Cross-Reference Search
BFG10W Datasheet (PDF)
bfg10wx.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG10W/XUHF power transistorProduct specification 1995 Sep 22NXP Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage4 3dual-emitter SOT343N package. 900 MHz an
bfg10wx 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG10W/XUHF power transistor1995 Sep 22Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistorencapsulated in a plastic, 4-pinfpage Small size discrete power amplifier 4 3dua
bfg10wx.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG10W/XUHF power transistorProduct specification 1995 Sep 22NXP Semiconductors Product specificationUHF power transistor BFG10W/XFEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage4 3dual-emitter SOT343N package. 900 MHz an
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
