BFG10W Datasheet. Specs and Replacement
Type Designator: BFG10W 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Collector Current |Ic max|: 0.25 A
Electrical Characteristics
Transition Frequency (ft): 2000 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: SO4
BFG10W Substitution
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BFG10W datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage 4 3 dual-emitter SOT343N package. 900 MHz an... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor 1995 Sep 22 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin fpage Small size discrete power amplifier 4 3 dua... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin Small size discrete power amplifier lfpage 4 3 dual-emitter SOT343N package. 900 MHz an... See More ⇒
Detailed specifications: BC869-25, BCP68-25, BCP69-16, BCP69-25, BCW61B, BCW61C, BF820W, BF824W, 2SC5200, BFG25A, BFG25AW, BFG310, BFG310W, BFG325, BFG325W, BFG410W, BFG424F
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