BFG540
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG540
Código: N37
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 15
V
Tensión emisor-base (Veb): 2.5
V
Corriente del colector DC máxima (Ic): 0.12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9000
MHz
Capacitancia de salida (Cc): 0.9
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT143B
Búsqueda de reemplazo de transistor bipolar BFG540
BFG540
Datasheet (PDF)
..1. Size:312K philips
bfg540 x xr n.pdf 
BFG540; BFG540/X; BFG540/XRNPN 9 GHz wideband transistorRev. 05 21 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin
..2. Size:132K philips
bfg540 bfg540x bfg540xr 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG540; BFG540/X; BFG540/XRNPN 9 GHz wideband transistorProduct specification 2000 May 23Supersedes data of 1997 Dec 03Philips Semiconductors Product specificationBFG540; BFG540/X;NPN 9 GHz wideband transistorBFG540/XRFEATURES PINNINGhandbook, 2 columns43 High power gainPIN DESCRIPTION Low noise figureBFG540 (Fig.1) Code: N
..3. Size:209K inchange semiconductor
bfg540 v2.pdf
isc Silicon NPN RF Transistor BFG540DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP.@V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP.21@V = 8 V,I = 40 mA,f = 900 MHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiersand linear broadband amplifiers.A
..4. Size:376K inchange semiconductor
bfg540.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor BFG540DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear bro
0.1. Size:412K philips
bfg540w wx wxr.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG540WBFG540W/X; BFG540W/XRNPN 9 GHz wideband transistorProduct specification 2000 May 23Supersedes data of 1997 Dec 04NXP Semiconductors Product specificationBFG540WNPN 9 GHz wideband transistorBFG540W/X; BFG540W/XRFEATURES MARKING High power gainTYPE NUMBER CODElfpage Low noise figure 4 3BFG540W N9 High transition
0.2. Size:130K philips
bfg540w bfg540wx bfg540wxr 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG540WBFG540W/X; BFG540W/XRNPN 9 GHz wideband transistorProduct specification 2000 May 23Supersedes data of 1997 Dec 04Philips Semiconductors Product specificationBFG540WNPN 9 GHz wideband transistorBFG540W/X; BFG540W/XRFEATURES MARKING High power gainTYPE NUMBER CODEfpage Low noise figure 4 3BFG540W N9 High transitio
0.3. Size:353K inchange semiconductor
bfg540-x.pdf
isc Silicon NPN RF Transistor BFG540/XDESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.AB
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