BFG540 Datasheet. Specs and Replacement

Type Designator: BFG540  📄📄 

SMD Transistor Code: N37

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 9000 MHz

Collector Capacitance (Cc): 0.9 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT143B

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BFG540 datasheet

 ..1. Size:312K  philips

bfg540 x xr n.pdf pdf_icon

BFG540

BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new lin... See More ⇒

 ..2. Size:132K  philips

bfg540 bfg540x bfg540xr 4.pdf pdf_icon

BFG540

DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification 2000 May 23 Supersedes data of 1997 Dec 03 Philips Semiconductors Product specification BFG540; BFG540/X; NPN 9 GHz wideband transistor BFG540/XR FEATURES PINNING handbook, 2 columns 43 High power gain PIN DESCRIPTION Low noise figure BFG540 (Fig.1) Code N... See More ⇒

 ..3. Size:209K  inchange semiconductor

bfg540 v2.pdf pdf_icon

BFG540

isc Silicon NPN RF Transistor BFG540 DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHz CE C High Gain S 2 =16dB TYP. 21 @V = 8 V,I = 40 mA,f = 900 MHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. A... See More ⇒

 ..4. Size:376K  inchange semiconductor

bfg540.pdf pdf_icon

BFG540

INCHANGE Semiconductor isc Silicon NPN RF Transistor BFG540 DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHz CE C High Gain S 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz 21 CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear bro... See More ⇒

Detailed specifications: BFG25AW, BFG310, BFG310W, BFG325, BFG325W, BFG410W, BFG424F, BFG424W, BC548, BFG540W, BFG541, BFQ540, BFQ591, BFR505, BFR505T, BFR540, BFR92AW

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