BUJ100LR Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUJ100LR  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.1 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 7.5

Encapsulados: TO92

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BUJ100LR datasheet

 ..1. Size:147K  nxp
 buj100lr.pdf pdf_icon

BUJ100LR

BUJ100LR NPN power transistor Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits Fast switching High voltage capability of 700 V 1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic

 ..2. Size:264K  cn ween semi
 buj100lr.pdf pdf_icon

BUJ100LR

BUJ100LR NPN power transistor 3 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses 3. Applications Compact fluorescent lamps (CFL) Electronic lig

 8.1. Size:71K  philips
 buj100at 1.pdf pdf_icon

BUJ100LR

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and inverters. QUICK REFERENCE DATA SYMBOL PARAMETER CONDIT

 8.2. Size:64K  philips
 buj100.pdf pdf_icon

BUJ100LR

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VC

MOSTRAR MÁS

Otros transistores... BFU660F, BFU690F, BFU710F, BFU725F, BFU730F, BFU760F, BFU790F, BUJ100, S8550, BUJ103A, BUJ103AD, BUJ103AX, BUJ105A, BUJ105AB, BUJ105AD, BUJ106A, BUJ302A