BUJ100LR Datasheet, Equivalent, Cross Reference Search
Type Designator: BUJ100LR
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.1 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 7.5
Noise Figure, dB: -
Package: TO92
BUJ100LR Transistor Equivalent Substitute - Cross-Reference Search
BUJ100LR Datasheet (PDF)
buj100lr.pdf
BUJ100LRNPN power transistorRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic
buj100lr.pdf
BUJ100LRNPN power transistor3 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)plastic package.2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses3. Applications Compact fluorescent lamps (CFL) Electronic lig
buj100at 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended foruse in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters andinverters.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT
buj100.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for usein compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVC
buj100.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUJ100Silicon Diffused Power TransistorProduct specification September 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for usein compact fluorescent lamps and low power electronic lig
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
