BUJ100LR Datasheet. Specs and Replacement

Type Designator: BUJ100LR  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.1 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 7.5

Noise Figure, dB: -

Package: TO92

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BUJ100LR datasheet

 ..1. Size:147K  nxp

buj100lr.pdf pdf_icon

BUJ100LR

BUJ100LR NPN power transistor Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits Fast switching High voltage capability of 700 V 1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic ... See More ⇒

 ..2. Size:264K  cn ween semi

buj100lr.pdf pdf_icon

BUJ100LR

BUJ100LR NPN power transistor 3 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses 3. Applications Compact fluorescent lamps (CFL) Electronic lig... See More ⇒

 8.1. Size:71K  philips

buj100at 1.pdf pdf_icon

BUJ100LR

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and inverters. QUICK REFERENCE DATA SYMBOL PARAMETER CONDIT... See More ⇒

 8.2. Size:64K  philips

buj100.pdf pdf_icon

BUJ100LR

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VC... See More ⇒

Detailed specifications: BFU660F, BFU690F, BFU710F, BFU725F, BFU730F, BFU760F, BFU790F, BUJ100, S8550, BUJ103A, BUJ103AD, BUJ103AX, BUJ105A, BUJ105AB, BUJ105AD, BUJ106A, BUJ302A

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