Биполярный транзистор BUJ100LR - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUJ100LR
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 2.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 7.5
Корпус транзистора: TO92
BUJ100LR Datasheet (PDF)
buj100lr.pdf
BUJ100LRNPN power transistorRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic
buj100lr.pdf
BUJ100LRNPN power transistor3 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)plastic package.2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses3. Applications Compact fluorescent lamps (CFL) Electronic lig
buj100at 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended foruse in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters andinverters.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT
buj100.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for usein compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVC
buj100.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUJ100Silicon Diffused Power TransistorProduct specification September 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for usein compact fluorescent lamps and low power electronic lig
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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